Molecular doping of near-infrared organic photodetectors for photoplethysmogram sensors

نویسندگان

چکیده

This study introduces three different molecular dopants for near-infrared organic photodetectors. The doped photodetectors exhibit low dark current, high detectivity and good environmental stability, can be used pulse rate monitoring.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption

Blending organic electron donors and acceptors yields intermolecular charge-transfer states with additional optical transitions below their optical gaps. In organic photovoltaic devices, such states play a crucial role and limit the operating voltage. Due to its extremely weak nature, direct intermolecular charge-transfer absorption often remains undetected and unused for photocurrent generatio...

متن کامل

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

متن کامل

Single InAs nanowire room-temperature near-infrared photodetectors.

Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼1.5 μm. The single InAs NW photodetectors displayed minimum hysteresis with a high Ion/Ioff ratio of 10(5). At room temperature, the Schottky-Ohmic contacted photodetectors had an external photoresponsivity of ∼5.3 × 10(3) AW(-1), which is ∼300% larger than that of Ohmic-Ohmic contacted detectors...

متن کامل

Near-infrared photodetectors based on Si/SiGe nanostructures

Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near-infrared range at room temperature. Heterojunction bipolar pho...

متن کامل

Silicon-Germanium multi-quantum well photodetectors in the near infrared.

Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa str...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Materials Chemistry C

سال: 2021

ISSN: ['2050-7526', '2050-7534']

DOI: https://doi.org/10.1039/d0tc05549b